Analysis of depletion silicon phase shifter based on computer simulation

In this work we reported the efficiency and loss performance of a depletion silicon rib phase shifter, with an overlayer of 220 nm, rib width of 500 nm, and etch depth of 125 nm. We identified a range of doping concentrations that allow the phase shifter to operate at <6 V and <5 dB loss. Junction placement variances are done with doping concentrations in this range. The study suggested that with reduced p dopant concentration (2x10(17) cm(-3)), both loss and phase performance will improve by 32% and 20% respectively when p region > n region, compared to central junction.