Analysis of depletion silicon phase shifter based on computer simulation

Proceedings of SPIE, pp. 9752042016.

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Abstract:

In this work we reported the efficiency and loss performance of a depletion silicon rib phase shifter, with an overlayer of 220 nm, rib width of 500 nm, and etch depth of 125 nm. We identified a range of doping concentrations that allow the phase shifter to operate at <6 V and <5 dB loss. Junction placement variances are done with doping ...More

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