Analysis of depletion silicon phase shifter based on computer simulation
Proceedings of SPIE, pp. 9752042016.
In this work we reported the efficiency and loss performance of a depletion silicon rib phase shifter, with an overlayer of 220 nm, rib width of 500 nm, and etch depth of 125 nm. We identified a range of doping concentrations that allow the phase shifter to operate at <6 V and <5 dB loss. Junction placement variances are done with doping ...More
Full Text (Upload PDF)
PPT (Upload PPT)