Optimization of p-Bonding Electrodes on ZnO:Ga in GaN-Based Light-Emitting Diodes

IEEE Transactions on Electron Devices（2016）

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摘要

We propose the optimal p-bonding electrode (p-BE) schemes on single-crystalline Ga-doped ZnO (ZnO:Ga) in GaN-based light-emitting diodes (LEDs) by means of Cr (3 nm)/Al0.9Cu0.1 (50 nm) reflection-assisted layer (RAL) and Pd0.8Al0.2/Ni/Au layers. Design factors for the p-BE were described from standpoints of bond strength, electrically equivalent circuit, and photon reflection. From contact test re...

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关键词

Light emitting diodes,Zinc oxide,II-VI semiconductor materials,Electrodes,Indium tin oxide,Photonics,Epitaxial layers

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