Numerical Modeling and Analysis for High-Efficiency Carrier-Depletion Silicon Rib-Waveguide Phase Shifters

In this paper, we report the efficiency and loss performance of a depletion silicon rib phase shifter with an overlayer of 220 nm and doping concentrationof 5 × 1017 cm-3 for both p and n regions. A Vpi of 3.6 V and a loss of 5.2 dB, 4-mm device is reported. We identified a range of doping concentrations that allow the phase shifter to operate at <;6 V and <;5-dB loss. Junction placement variances...