Bilayer Metal-Oxide Conductive Bridge Memory Technology for Improved Window Margin and Reliability

M. Barci,Gabriel Molas,Carlo Cagli,Elisa Vianello,M. Bernard,A. Roule,A. Toffoli,J. Cluzel,Barbara De Salvo,L. Perniola

IEEE Journal of the Electron Devices Society（2016）

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摘要

In this paper, a detailed reliability analysis of metal-oxide conductive bridge memories (CBRAM) is presented. This paper mostly focuses on electrical characterization of metal-oxide CBRAM devices endurance, using optimized program/erase conditions, and data retention at high temperature. The addition of a thin metal-oxide layer (0.5 nm-thick Al2O3) in the bottom of the GdOx memory stack significa...

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关键词

Aluminum oxide,Electrodes,Thermal stability,Bridge circuits,Resistance,Hafnium compounds

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