Improved NBTI characteristic of HKMG FinFET with thermal oxidized interlayer and post interlayer anneal

Xin He,Xinyun Xie, Yong Li, Shuai Zhang,Zhaoxu Shen, Fei Zhou,Xiaolei Yang, Jie Zhao, Qiumin Jin,Junhong Feng,Jianhua Ju

2016 China Semiconductor Technology International Conference (CSTIC)（2016）

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摘要

The negative-bias-temperature-instability (NBTI) characteristic of PMOS high-k metal-gate (HKMG) bulk FinFETs with different interlayer (IL) fabrication process is investigated in this paper. Compared with chemical oxide IL, both post IL anneal and thermal oxidized IL can improve the device NBTI performance, which is due to the reduction of interface trap states during thermal process. Moreover, post IL anneal is found to be more effective in improving NBTI. The impact of IL process on device static electrical performance is also studied, which is detailed in the following.

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关键词

NBTI characteristic,HKMG FinFET,thermal oxidized interlayer,post interlayer anneal,negative-bias-temperature-instability,PMOS high-k metal-gate,interlayer fabrication process,interface trap states

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