Spectroscopic Diagnostics Of Defect And Interface Effects On Carrier Dynamics In Semiconductor Optoelectronics

We use steady-state and time-resolved spectroscopy to evaluate optoelectronic material quality and obtain detailed information about carrier generation, transport, and relaxation in semiconductor devices and test structures. This report focuses on time-resolved and steady-state photoluminescence of III-V reference heterostructures at temperatures between 4K and 300K in order to investigate the mechanisms limiting carrier lifetime and to develop the capability to provide actionable feedback to R&D efforts for improvement and optimization of material properties and/or device performance. We combine the results of photoluminescence experiments with model-based analyses and simulations of carrier relaxation to assess the impacts of defects and interface quality on the relaxation dynamics of photo-generated carriers in double heterostructure test vehicles grown by MOCVD and MBE.