Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires

Cesare Frigeri,David Scarpellini,Alexey Fedorov,Sergio Bietti,C. Somaschini,Vincenzo Grillo,Luca Esposito,Marco Salvalaglio,Anna Marzegalli,F. Montalenti,Stefano Sanguinetti

Applied Surface Science（2017）

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摘要

•We study 2 critical issues (interface abruptness and strain release) in InAs/GaAs NWs.•Structural and chemical interface sharpness ≤1.5nm, better than in previous reports.•Simultaneous elastic and plastic relaxation is shown that agrees with FEM simulations.•Structural, chemical and strain release investigations were performed by STEM.•New MBE self-seeded method whereby InAs is grown by splitting In and As depositions.

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关键词

Nanowires,InAs/GaAs,Self-assisted,MBE,TEM,FEM

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