Ammonium ion detection in solution using vertically grown ZnO nanorod based field-effect transistor
RSC ADVANCES(2016)
摘要
Vertically aligned ZnO nanorods were directly grown on a seeded glass substrate between a pre-deposited source-drain to fabricate a field-effect transistor (FET) based ammonium ion sensor. Controlled growth of aligned nanorods provided a well-defined large surface area for the detection of ammonium ions in solution.
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