An Ultra Low-Power Non-Volatile Memory Design Enabled by Subquantum Conductive-Bridge RAM

Nathan Gonzales,John Dinh,Derric Lewis,Nad Edward Gilbert, Bard Pedersen,Deepak Kamalanathan,John R. Jameson,Shane Hollmer

2016 IEEE 8th International Memory Workshop (IMW)（2016）

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摘要

Conductive-bridge RAM (CBRAM) memory cells offer speed, voltage, and energy advantages over floating gate flash cells. Here, we describe a memory design which carries these cell-level advantages up to the product level, achieving 100x lower read and write power and 10x lower standby power than typical flash-based designs.

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关键词

ultralow-power nonvolatile memory design,subquantum conductive-bridge RAM,CBRAM memory cell,floating gate flash cell

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