Resistance and electromigration performance of 6 nm wires
2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC)（2016）
摘要
A process to achieve 6 nm minimum dimension interconnect wires is realized using standard 193 nm lithography. Various metals including copper are optimized to gap fill features, and tested for electrical performance and reliability. Measurements showing line electrical resistance and electromigration as functions of material, conducting area, and interfaces are presented.
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关键词
electrical resistance,electrical reliability,electrical performance,standard lithography,minimum dimension interconnect wires,electromigration performance,size 193 nm,size 6 nm
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