Electrical Coupling of Monolithic 3-D Inverters

In this brief, we investigate the electrical coupling between stacked field-effect transistors (FETs) in monolithic 3-D inverters (M3INVs). We study the range of interlayer dielectric (ILD) thickness (TILD) and channel length Lg values that lead to a strong coupling between stacked FETs. Our device simulations show that M3INVs with TILD ≥ 50 nm lead to negligible interaction between the stacked FE...