Reduction of TFET OFF-Current and Subthreshold Swing by Lightly Doped Drain

This brief models the effect of lightly doped drain on the Ids-Vgs and Ids-Vds characteristics of tunnel FETs. It is shown that an extended drain depletion region can greatly reduce both the off-current and the subthreshold swing with essentially no impact on the on-current. In particular, a lightly doped drain mitigates the undesirable ambipolar effect that cannot otherwise be relieved by lengthe...