Field Sensors and Tunable Devices Using Magnetoelectric Hexaferrite on Silicon Substrates

In this paper, the H-field and E-field sensors as well as the tunable devices are fabricated by utilizing single-phase magnetoelectric (ME) hexaferrite thin films on a silicon substrate. A buffer layer of indium-tin oxide is introduced between the Si wafer and the ME film. The required voltage excitations are reduced to values below 1 V at room temperature, hence making these devices compatible wi...