Structural properties of poly-Si thin films grown on ZnO:Al coated glass substrates by aluminium induced crystallisation

The structural properties of poly-Si thin films on ZnO:Al coated glass substrates obtained by Aluminium-Induced Crystallisation (AIC) in different annealing atmospheres - air, N-2, and N-2 + H-2, have been studied by Raman microprobe spectroscopy, optical microscopy, and X-ray diffraction. The AI, ZnO:Al and a-Si films were deposited by r.f. magnetron sputtering. Annealing in forming gas led to a better structural quality of the poly-Si films, compared to annealing in air or nitrogen. The investigation of different annealing conditions in forming gas led to the conclusion that the two-step annealing technique provided AIC poly-Si films with better crystalline properties. The results indicated that the process of AIC is suitable for the preparation of poly-Si films on ZnO:Al coated glass substrates, for solar cell applications.