Characterization of traps at SOI/BOX interface by back gate transconductance characteristics in SOI MOSFETsYoshikata Nakajima, H. Tomita,K. Aoto,N. Ito,Tatsuro Hanajiri,Toru Toyabe, T. Morikawa,Takuo SuganoThe Japan Society of Applied Physics(2002)引用 0|浏览2暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要