Impact of the Activation Annealing Temperature on the Performance, NBTI and TDDB Lifetime of High-k/Metal Gate Stack pMOSFETsMotoyuki Sato,Takayuki Aoyama,Yasuo Nara,Yuzuru OhjiThe Japan Society of Applied Physics（2008）引用 0|浏览6暂无评分AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
