Behavior of in-grown Stacking Faults in 4H-SiC Epitaxial Layer Through Annealing ProcessRyo Hattori, K. Hamano, J. Moritani,Kazuhiko Sato,Tatsuo OomoriThe Japan Society of Applied Physics（2010）引用 0|浏览3暂无评分关键词Processing TechniquesAI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
