Voltage-Modulated Position Sensitivity and Nonlinearity in a-Si:H/c-Si p-i-n Structure by Different Connection Methods

In this letter, we report a significant finding of the bias voltage-modulated lateral photovoltaic effect in a-Si:H/c-Si p-i-n structure under two different methods. The lateral photovoltaic effect was improved greatly when an external bias voltage was applied, with position sensitivity linearly dependent on the laser power. For method 1, although the position sensitivity is as high as 643.2 mV/mm...