InP on SOI Electrically Driven Photonic Crystal Nanolasers

Guillaume Crosnier,Dorian Sanchez,Paul Monnier,Sophie Bouchoule,Gregoire Beaudoin,Isabelle Sagnes,Rama Raj,Fabrice Raineri

2016 Compound Semiconductor Week (CSW) Includes 28th International Conference on Indium Phosphide &amp Related Materials (IPRM) &amp 43rd International Symposium on Compound Semiconductors (ISCS)（2016）

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摘要

Summary form only given. Electrically driven CW operation of energy-efficient ultra-compact InP-based nanolasers in a Silicon photonic platform is demonstrated. The nanolaser diode is single mode and emits at 1560 nm with SMSR grater than 20dB. The threshold is low, around 0.1mA at 1 V and the emitted power in the SOI waveguide is of the order of 0.1mW giving a wall-plug efficiency higher than 10 percents.

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关键词

InP-on-SOI waveguide electrically driven photonic crystal nanolaser diode,electrically driven CW operation,silicon photonic platform,wall-plug efficiency,wavelength 1560 nm,voltage 1 V,power 0.1 mW,InP-Si

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