Improved Reliability of InGaN-Based Light-Emitting Diodes by HfO2 Passivation Layer.

We utilized a passivation layer to improve the leakage current and reliability characteristics of GaN-based light-emitting diodes. The electrical and optical characteristics of the fabricated LEDs were characterized by current-voltage and optical power measurements. The HfO2 passivation layer showed no optical power degradation and suppressed leakage current. The low deposition temperature of sputtered HfO2 is responsible for the improved reliability of the LEDs because it suppresses the diffusion of hydrogen plasma into GaN to form harmful Mg-H complexes.