Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric

Da Jung Lee,Jung Wook Lim,Jae Kyoung Mun,Sun Jin Yun

Materials Research Bulletin（2016）

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摘要

⿢We fabricated Al2O3 films by PEALD and compared them with those by RPALD.⿢Electrical properties of Al2O3 films with and without post-annealing were compared.⿢The breakdown field was enhanced for introducing nitrogen gas in Al2O3 films.⿢In the PEALD process, we confirmed the self-limiting mechanism.

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关键词

Atomic layer deposition,Plasma enhanced atomic layer deposition,Remote plasma atomic layer deposition,Dielectric materials,Al2O3 gate dielectric

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