Kerfless Epitaxial Mono Crystalline Si Wafers With Built-In Junction and From Reused Substrates for High-Efficiency PERx Cells

IEEE Journal of Photovoltaics(2016)

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摘要
This paper proposes a kerfless wafer structure with built-in p-n junctions in n-type silicon wafers grown using Crystal Solar's high throughput epitaxy technology. Compared with a conventional p-type emitter by boron diffusion, ion implantation, or epitaxy, the built-in p-type emitter has a reduced and uniform doping concentration and increased thickness. The epitaxially grown wafers and conventio...
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关键词
Epitaxial growth,Substrates,Photovoltaic cells,Doping,Silicon,P-n junctions
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