A 330 Ghz Active Frequency Quadrupler In Inp Dhbt Transferred-Substrate Technology

2016 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS)(2016)

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摘要
This paper presents a wideband 330 GHz frequency quadrupler using 0.8 mu m transferred substrate (TS) InP-HBT technology. The process includes a heat-spreading diamond layer, which improves the power handling capability of the circuit. The quadrupler delivers -7 dBm output power at 325 GHz, at a DC consumption of only 40 mW, which corresponds to 0.5 % of efficiency. It achieves 90 GHz bandwidth and exhibits very low unwanted harmonics. The circuit utilizes a balanced architecture. The results demonstrate the potential of the InP TS.
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关键词
InP double heterojunction bipolar transistor (DHBT), monolithic microwave integrated circuit (MMIC), millimeter wave (mm-wave), terahertz (THz), transferred-substrate (TS) process
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