InGaZnO-Based Stretchable Ferroelectric Memory Transistor Using Patterned Polyimide/Polydimethylsiloxane Hybrid Substrate

Future stretchable electronic systems require memory devices that combine low power consumption with mechanical stretchability. We fabricated stretchable ferroelectric memory transistors (FMTs) on a polydimethylsiloxane substrate with patterned polyimide island structures by using an amorphous InGaZnO semiconductor and ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)) gate insulator. The FMTs exhibited a field-effect mobility of 7.5 cm(2)V(-1)s(-1) and a current on/off ratio of 10(7) at a relatively low operating voltage. Furthermore, the fabricated memory transistors showed no noticeable changes in their electrical performance for large strains of up to 50%.