Single Event Transients and Pulse Quenching Effects in Bandgap Reference Topologies for Space Applications

Charalambos M. Andreou,Arto Javanainen, Adrian Rominski,A. Virtanen,Valentino Liberali,Cristiano Calligaro,Alexander V. Prokofiev,Simone Gerardin,Marta Bagatin,Alessandro Paccagnella,Diego M. González-Castaño,F. Gómez,Daniel Nahmad,Julius Georgiou

IEEE Transactions on Nuclear Science（2016）

引用 15|浏览52

暂无评分

摘要

An architectural performance comparison of bandgap voltage reference variants, designed in a 0.18 μm CMOS process, is performed with respect to single event transients. These are commonly induced in microelectronics in the space radiation environment. Heavy ion tests (Silicon, Krypton, Xenon) are used to explore the analog single-event transients and have revealed pulse quenching mechanisms in ana...

查看译文

关键词

Transistors,Radiation effects,CMOS analog integrated circuits,Topology,Single event transients,Transient analysis,Radiation hardening (electronics),Aerospace electronics

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要