Room Temperature Ingaas/Inp Distributed Feedback Laser Directly Grown On Silicon

2016 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)(2016)

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摘要
We report an optically pumped room-temperature O-band DFB laser, based on the buffer-less epitaxial growth of high quality InGaAs/InP waveguides directly on silicon wafer.
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关键词
optically pumped room-temperature O-band DFB laser,room-temperature distributed feedback laser,buffer-less epitaxial growth,waveguides,silicon wafer,temperature 293 K to 298 K,InGaAs-InP,Si
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