On The Variability Of Threshold Voltage Window In Gate-Injection Versatile Memories With Sub-60mv/Dec Subthreshold Swing And 10(12)-Cycling Endurance

Incorporating a charge-trapped ZrSiO with ferroelectric HfZrO dielectrics, we demonstrated a gate-injection versatile memory with sub-60mV/dec subthreshold swing (SS) and large threshold voltage window (Delta V-T) of >2V under a fast 20-ns speed. Moreover, it is revealed that the local defects at ZrSiO/HfZrO interface affect the ferroelectric negative capacitance tuning and thus increases the variability of V-T and SS during 10(12) cycling endurance.