Mechanism of breakdown enhancement in AlGaN/GaN HEMTs using a high-k passivation layer

Sheng-Lei Zhao,Xiaojun Fu,Fan Liu,Luncai Liu,Jun Luo,Gangyi Hu,Xiaohua Ma,Jincheng Zhang,Yue Hao

2016 IEEE International Nanoelectronics Conference (INEC)（2016）

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摘要

In this paper, we have investigated the mechanism of breakdown enhancement in AlGaN/GaN HEMTs using a high-k passivation layer. A group of depletion capacitance models are proposed to investigate the breakdown enhancement of the high-k passivation layer. With a passivation layer, the drain-side wall and top of the gate metal would form metal-insulator-semiconductor contacts with GaN-based heterojunction, which is the reason for the modulation of the high-k passivation layer on electric field.

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关键词

breakdown voltage,depletion capacitance model,GaN-based high-electron mobility transistors (HEMTs),high-k passivation layer

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