Hexagonal boron nitride as a cationic diffusion barrier to form a graded band gap perovskite heterostructure

Onur Ergen,Stephen Gilbert,Sally J. Turner,Alex Zettl

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS（2016）

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摘要

We demonstrate a new technique to produce graded bandgap organohalide perovskite heterostructures using hexagonal boron nitride (h-BN) as a cationic separator. With this technique, we successfully deposit CH3NH3PbI3-xBrx on CH3NH3SnI3 without cation mixing.

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关键词

2D materials,cationic diffusion barrier,graded bandgap,hexagonal boron nitride (h-BN),perovskites

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