Temperature Dependence of Critical Device Parameters in 1 Gbit Perpendicular Magnetic Tunnel Junction Arrays for STT-MRAM

Chando Park,Jimmy J. Kan,C. Ching,Jaesoo Ahn,Lin Xue,R. Wang, A. Kontos, S. Liang,M. Bangar,H. Chen,S. Hassan, S. Kim,Mahendra Pakala,Seung H. Kang

IEEE Transactions on Magnetics（2017）

引用 15|浏览12

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摘要

This paper investigates the temperature-dependent behaviors of critical device parameters in 1 Gb perpendicular magnetic tunnel junction (pMTJ) arrays from 25 °C to 125 °C. Despite the fact that pMTJ (45-50 nm in diameter) attributes are generally degraded at elevated temperatures, this paper suggests that an adequate combination of critical device parameters can be obtained through systematic mat...

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关键词

Temperature sensors,Temperature measurement,Tunneling magnetoresistance,Sensitivity,Temperature distribution,Switches

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