Statistical Write Stability Characterization in SRAM Cells at Low Supply Voltage

Hao Qiu,Kiyoshi Takeuchi,Tomoko Mizutani,Yoshiki Yamamoto,Hideki Makiyama,Tomohiro Yamashita,Hidekazu Oda,Shiro Kamohara,Nobuyuki Sugii,Takuya Saraya,Masaharu Kobayashi,Toshiro Hiramoto

IEEE Transactions on Electron Devices（2016）

引用 16|浏览7

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摘要

Four write stability metrics for the characterization of six-transistor SRAM cells were experimentally evaluated and compared at low supply voltage (VDD). A silicon-on-thin-BOX technology with reduced body doping was used to achieve low voltage operation. It was confirmed that both bitline and wordline methods are preferable in that they yield metrics that follow normal distributions, which is pra...

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关键词

SRAM cells,Wireless sensor networks,Measurement,Substrates,Circuit stability,Stability criteria

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