MOVPE growth and characterization of quaternary Ga(PAsBi)/GaAs alloys for optoelectronic applications

L. Nattermann,P. Ludewig,Nikolai Knaub,Nils W. Rosemann, T. Hepp,E. Sterzer,S. R. Jin,K. Hild,S. Chatterjee,S. J. Sweeney,W. Stolz,K. Volz

Applied Materials Today（2016）

引用 12|浏览27

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摘要

•Calculation of band gap and spin-orbit split-off energies of Ga(PAsBi) for different compositions.•Temperature-dependent PL and comparison with theory.•High-quality MOVPE growth of Ga(PAsBi).•Surface and interface investigations on Ga(PAsBi) on an atomic scale.•Comprehensive growth studies on Ga(PAs) and Ga(PAsBi) materials.

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关键词

Solar cells,Laser material,Metal organic chemical vapour deposition,Bismuth compounds,Semiconducting III-V materials,Characterization,Crystal morphology

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