Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and Selectors

Wenhao Chen,Runchen Fang,Hugh J. Barnaby,Mehmet Bugra Balaban,Y. Gonzalez-Velo,J. Taggart,A. Mahmud,Keith E. Holbert,Arthur H. Edwards,Michael N. Kozicki

IEEE Transactions on Nuclear Science（2017）

引用 12|浏览40

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摘要

In this paper, the operation and effects of radiation on Programmable Metallization Cells (PMC) memory and selector devices are analyzed and discussed. The Ag- or Cu-Ge30Se70 devices demonstrate non-volatile memory switching characteristics while the Ag- or Cu-SiO2 devices show a volatile threshold switching property. The impact of total ionizing dose from gamma-ray irradiation on both device type...

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关键词

Switches,Computer architecture,Resistance,Microprocessors,Gamma-rays,Anodes

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