Normally-Off GaN HFET Based on Layout and Stress Engineering

Hiu Yung Wong,Nelson Braga,R. V. Mickevicius

IEEE Electron Device Letters（2016）

引用 8|浏览50

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摘要

A novel normally-off GaN HFET based on layout and stress engineering is proposed and verified using technology CAD (TCAD) simulations. It requires no process modification to existing GaN HFET processes, except that passivation nitride needs to be intrinsically stressed. The device essentially consists of a normally-off low voltage (LV) HFET and a normally-on high voltage (HV) HFET. The LV HFET has...

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关键词

HEMTs,MODFETs,Logic gates,Stress,Gallium nitride,Passivation,Solid modeling

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