GaN on Low-Resistivity Silicon THz High-Q Passive Device Technology

Abdalla Eblabla,Xu Li,David J. Wallis,Ivor Guiney,Khaled Elgaid

IEEE Transactions on Terahertz Science and Technology（2017）

引用 20|浏览24

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摘要

In this paper, viable transmission media technology has been demonstrated for the first time on GaN on low-resistivity silicon) substrates (ρ <; 40 Ω·cm) at H-band frequencies (220-325 GHz). The shielded-elevated coplanar waveguide (CPW) lines employ a standard monolithic microwave integrated circuit compatible air bridge process to elevate the CPW traces above a 5-μm layer of benzocyclobutene on ...

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关键词

Substrates,Silicon,Coplanar waveguides,Gallium nitride,Insertion loss,Media,MMICs

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