p-Type CuBi2O4 thin films prepared by flux-mediated one-pot solution process with improved structural and photoelectrochemical characteristics

The flux-mediated one-pot solution process based on the metal-organic decomposition (MOD) has been developed for the preparation of p-type complex oxide semiconductor CuBi2O4 thin films. The precursor solutions with the various concentrations (0.5, 2, 5, and 10mol% vs. CuBi2O4) of aliovalent Li(I) flux produced the continuous and dense CuBi2O4 thin films with stoichiometric composition by facilitating the crystallization from the liquid precursor solution. These films showed the high hole density and charge transfer characteristics, which lead to the high photoelectrochemical activity for water reduction.