2.25- $\mu$ m Avalanche Photodiodes Using Metamorphic Absorber and Lattice-Matched Multiplier on InP

Y. J. Ma,Yonggang Zhang,Yi Gu,Xingyou Chen, Y. H. Shi, W. Y. Ji,S.P. Xi, B. Du, H. J. Tang,Yongfu Li,Jiaxiong Fang

IEEE Photonics Technology Letters（2017）

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摘要

A separated absorption and multiplication avalanche photodiode for light detection to wavelengths as long as 2.25~μm is reported. Photons were absorbed in a metamorphic In0.75Ga0.25As layer, while the photo-generated electrons were injected into a lattice-matched In0.52Al0.48As multiplier on InP. A responsivity gain of 2.7 was attained at 2 μm at 250 K and increased to 20 at 77 K. A primary dark c...

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关键词

Avalanche photodiodes,Indium phosphide,III-V semiconductor materials,Dark current,Indium compounds,Current measurement,Temperature measurement

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