Development of a high-band gap high temperature III-nitride solar cell for integration with concentrated solar power technology

Joshua J. Williams,Heather McFavilen,Alec M. Fischer,Ding Ding,Steven Young,Ehsan Vadiee,F. A. Ponce,Chantal Arena,Christiana Honsberg,Stephen M. Goodnick

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)（2016）

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摘要

The III-N material class of semiconductors exhibits desirable properties for construction of a cell for integration with the thermal receiver of a concentrated solar plant. We design a GaN-InGaN based solar cell for operation at 450 °C. An MQW structure for the InGaN absorber is selected to improve voltage through improved material quality. Cell performance shows a VOC of 2.4 V for room temperature and 1.7 V at operating temperature and 300x suns. EQE measurements show little cell performance decrease up to 500 °C. Repeated measurements indicate the device to be thermally robust.

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关键词

high-band gap high temperature III-nitride solar cell,concentrated solar power technology,III-N material,thermal receiver,concentrated solar plant,solar cell,MQW structure,material quality,EQE measurements,temperature 450 degC,voltage 2.4 V,temperature 293 K to 298 K,voltage 1.7 V,GaN-InGaN

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