5.2-THz single-mode lasing in current-injection distributed-feedback dual-gate graphene-channel field-effect transistor

Gen Tamamushi,Takayuki Watanabe,A. A. Dubinov, Hiroyuki Wako,Akira Satou,Tetsuya Suemitsu,Maxim Ryzhii,Victor Ryzhii,Taiichi Otsuji

2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz)（2016）

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摘要

A distributed-feedback (DFB) dual-gate graphene-channel field-effect transistor was fabricated as a current-injection terahertz laser. A single mode emission at 5.2 THz was observed at 100K beyond the threshold carrier injection level. Spectral narrowing with increasing the carrier injection around the threshold was also observed. The result is still preliminary level but the linewidth fairly agrees with numerical simulation based on DFB-Fabry-Perrot hybrid-mode modeling.

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关键词

single-mode lasing,current-injection distributed-feedback dual-gate graphene-channel field-effect transistor,current-injection terahertz laser,single mode emission,threshold carrier injection level,spectral narrowing,DFB-Fabry-Perrot hybrid-mode modeling,frequency 5.2 THz,temperature 100 K

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