1.7-mW nitride-based vertical-cavity surface-emitting lasers using AlInN/GaN bottom DBRs

Takashi Furuta,Kenjo Matsui, Yugo Kozuka,Shotaro Yoshida, Natsumi Hayasi,Takanobu Akagi,Norikatsu Koide,Tetsuya Takeuchi,Satoshi Kamiyama,Motoaki Iwaya,Isamu Akasaki

2016 International Semiconductor Laser Conference (ISLC)（2016）

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摘要

We demonstrated 1.7 mW nitride-based vertical-cavity surface-emitting lasers (VCSELs) using AlInN/GaN distributed Bragg reflectors (DBRs). The threshold current was 4.5 mA, and the external differential quantum efficiency was estimated to be 11.5%.

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关键词

VCSEL,DBR,AlInN,GaN

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