HfOx complementary resistive switches

Marina Labalette,Serge Ecoffey,Simon Jeannot,A. Souifi,Dominique Drouin

2016 IEEE Nanotechnology Materials and Devices Conference (NMDC)（2016）

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摘要

This paper proposes the fabrication, together with morphological and electrical characterizations of complementary resistive switches using a nanodamascene process. Complementary switches electrical performance are coherent with ReRAM fabricated and characterized with the same procedure that showed Ron/Roff ratios of 100. Complementary operating voltages of V _th1,3 = |0.8| V and V _th2.4 = |1.1| V are obtained for 88×22 nm ² junction with 6 nm thick HfO _x .

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关键词

complementary resistive switches,morphological characterizations,electrical characterizations,nanodamascene process,electrical performance,resistive random access memories,ReRAM,voltage 0.8 V,voltage 1.1 V,size 6 nm,HfOx

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