Ga2O3 filsm alloyed with SnO2 and treated by RF plasma : an interesting way for the development of transparent contacts for UV-emitting photonics devices

Frédéric Genty, Alban Maertens,Samuel Margueron,A. Abrutis,Thierry Belmonte,Pascal Boulet,A. Bartasyte

Photonics（2016）

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摘要

Layers of Ga2O3 alloyed up to 15 at% with Sn4+ has been studied after treatment by RF plasma. An increased conductivity was measured which is an interesting step towards transparent contacts for UV-emitting photonics devices.

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