Schottky contact metallization stability on AlGaN/GaN heterostructure during the diamond deposition process
2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM)(2016)
摘要
The issue of gate metallization stability on AlGaN/GaN heterostructure during the diamond deposition process has been studied. Among tested Ni, Ir, NiO and IrO
2
materials the iridium-based has the most promising characteristic to be used. The diamond growth in focused microwave plasma system on transistors with Ir and IrO
2
Schottky contact metallization has been demonstrated and discussed.
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关键词
Schottky contact metallization stability,gate metallization stability,heterostructure,diamond deposition process,diamond growth,focused microwave plasma system,transistors,AlGaN-GaN,IrO2
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