Effect of nanopillar sublayer embedded with SiO2 on deep traps in green GaN/InGaN light emitting diodes

K. B. Bae
K. B. Bae
R. A. Zinovyev
R. A. Zinovyev
Tae-Hoon Chung
Tae-Hoon Chung
I. V. Shchemerov
I. V. Shchemerov
E. S. Kondratyev
E. S. Kondratyev

Journal of Applied Physics, pp. 0451082017.

Cited by: 8|Bibtex|Views2|DOI:https://doi.org/10.1063/1.4974971
Other Links: academic.microsoft.com

Abstract:

The effect of a layer of GaN nanopillars with SiO2 nanoparticles inserted into the n+-GaN contact Layer on the electrical properties, electroluminescence (EL) and photoluminescence (PL), admittance spectra, and deep trap spectra of green multi-quantum-well GaN/InGaN light emitting diodes (LEDs) grown by metalorganic chemical vapor deposit...More

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