Compact Modeling of Distributed Effects in 2-D Vertical Tunnel FETs and Their Impact on DC and RF Performances

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits（2017）

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摘要

In this paper, distributed effects along the channel are investigated for 2-D vertical tunnel FETs by developing a model based on a succession of unit cells along the channel, each of which includes lateral FET conduction and vertical tunnel conduction components. The distributed model shows that there are tradeoffs between these two conduction mechanisms in both dc and RF characteristics. At dc, ...

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关键词

Tunneling,Logic gates,Field effect transistors,Integrated circuit modeling,Radio frequency,Capacitance,Current density

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