Development of n-type Te-doped GaSb substrates with low carrier concentration for FPA applications

K. Roodenko, P.-K. Liao,D. Lan, K.P. Clark,E.D. Fraser, P.W. Frensley, K.W. Vargason, J.-M. Kuo,Y.-C. Kao, P.R. Pinsukanjana

Infrared Physics & Technology（2017）

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摘要

•Epi-ready, highly resistive GaSb substrates with low Te doping were produced.•Correlation between Hall and FTIR data for low Te-doped GaSb wafers was performed.•Established non-destructive way to profile carrier concentration across GaSb wafers.•Observed reduction in hole carrier concentration background upon cooling to 77K.

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关键词

GaSb substrates,Te doping,MBE,FTIR,Hall,Carrier concentration,Infrared

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