Experimental Characterization of the Thermal Time Constants of GaN HEMTs Via Micro-Raman Thermometry
IEEE Transactions on Electron Devices, pp. 2121-2128, 2017.
Gallium nitride (GaN) high-electron mobility transistors (HEMTs) are a key technology for realizing next generation high-power RF amplifiers and high-efficiency power converters. However, elevated channel temperatures due to self-heating often severely limit their power handling capability. Although the steady-state thermal behavior of Ga...More
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