Experimental Characterization of the Thermal Time Constants of GaN HEMTs Via Micro-Raman Thermometry

IEEE Transactions on Electron Devices, pp. 2121-2128, 2017.

Cited by: 3|Bibtex|Views1|DOI:https://doi.org/10.1109/TED.2017.2679978
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Abstract:

Gallium nitride (GaN) high-electron mobility transistors (HEMTs) are a key technology for realizing next generation high-power RF amplifiers and high-efficiency power converters. However, elevated channel temperatures due to self-heating often severely limit their power handling capability. Although the steady-state thermal behavior of Ga...More

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