High-Performance Uniaxial Tensile Strained n-Channel JL SOI FETs and Triangular JL Bulk FinFETs for Nanoscaled Applications

In this paper, one proposed an effective method to enhance current drivability of junctionless FETs (JL-FETs) by utilizing uniaxial tensile strain effects. The strained layers were deposited on JL-FETs on silicon-on-insulator (SOI) and bulk Si wafers, respectively. Strained JL SOI FETs show an extremely low subthreshold swing (S.S.) of 65 mV/decade with ION/IOFF > 109; strained JL bulk FinFETs sho...