Physical Mechanisms Affecting the Reliability of GaN-based High Electron Mobility TransistorsRonald D. Schrimpf,D.M. Fleetwood,Sokrates T. Pantelides,Yevgeniy Puzyrev,Shubhajit Mukherjee,Robert A. Reed,James S. Speck,Umesh K. MishraMRS Proceedings(2015)引用 0|浏览6暂无评分关键词reliability,gan-basedAI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要