Record Effective Mobility Obtained From In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As Quantum-Well MOSFETs on 300-mm Si Substrate

In this letter, we have investigated the properties of In0.53Ga0.47As quantum-well (QW) metal-oxide-semiconductor field-effect-transistors (MOSFETs) on a 300-mm (100) Si wafer. We have explored the impact of scaling down In0.53Ga0.47As channel thickness (tch) from 15 to 5 nm. The fabricated devices show excellent electrostatic integrity, such as subthreshold-swing (SS) <; 80 mV/decade and drain-in...